Enabling IPD Technology
JCET’s IPD technology is a key enabler featuring silicon-based passive integration of RLC components. IPDs are a cost effective way to reduce footprint, reduce interconnection complexity, improve component tolerance, yield and reliability. By integrating and fabricating passive devices at the silicon wafer level, JCET is able to fabricate IPDs which are significantly smaller, thinner and with higher performance than standard passive devices.
To achieve superior IPD performance, JCET employs a copper metallization process capable of depositing 8 microns or more of copper on a silicon wafer. This results in higher Q components that reduce loss in the RF signal transmission path, thereby increasing battery performance of the wireless system and improving reception. The size of matching circuitry and filters is often reduced by 40%.
IPD Component Library
JCET’s foundry service includes fully characterized resistor, capacitor, inductor, filter, BALUN, transceiver, and receiver libraries complete with full electrical models of all library components for packages such as the QFN, LFBGA, FLGA and eWLB. In addition to standard IPD library solutions, customized IPD designs are also available. Refer to JCET’s IPD Products Databook (2nd ed.) for a comprehensive list of IPD products that can be integrated into RF SiP solutions.
A Comprehensive RF Solution
JCET provides the highest level integration of wireless systems. With leading edge technology in IPD, wafer level, 3D packaging and a comprehensive RF solutions portfolio, including wafer sort, design, assembly, RF test and supply chain management, JCET offers RF semiconductor companies a complete turnkey solution and distinct competitive advantage in their market.