Items |
Standard |
Application |
Optical Microscope |
Inspect sample appearance , die surface, crack, contamination, scratch, oxide layer defects ,etc. |
|
X-RAY |
Inspect bonding wires, die attach and lead frame,void,etc. |
|
*SAT |
JEDEC J-STD-035-1999 |
Inspect delamination,package crack,die crack |
JUNO TEST |
Semiconductor parametric measurement of diode, transistor, MOS or Three-terminal regulator test. |
|
*IV CURVE TRACER |
GB/T 13973-2012 |
Semiconductor parametric measurement of MOS, BJT or ICs. Compared with good unit find differences. |
TDR |
TDR is used to measure reflections and time delays of pulses injected into a transmission line. Failure point positioning, Impedance measurement, Open/short test. |
|
DE-CAP |
Remove the compound, expose the die , to observe defect of die or wire bond |
|
PROBE TEST |
Observe electrical parameter or characteristic curve of the die |
|
Crater test |
Removing top metal layer on pad area, then observed whether the underlay damage |
|
ION MILLING SYSTEM |
Mechanical polishing fine processing , tiny cracks and void (for other polishing method is difficult),multilayer structure interface, resistance to grinding which it is easy damage. |
|
Scanning Electron Microscopy |
Plan view and cross sectional microstructure inspection for all kinds of samples Multilayer sample inspection and precise critical dimension measurement |
|
EDX |
Conduct qualitative and semi-quantitative analysis for specified microstructure , analysis elements on the sample surface. |
|
RIE |
Layer by layer checking/ inspection, such as etching residue, metal crack or broken, oxide defect and poor via connection。 |