Items

Standard

Application

Optical Microscope

Inspect sample appearance , die surface, crack, contamination, scratch, oxide layer defects ,etc.

X-RAY

Inspect bonding wires, die attach and lead frame，void，etc.

*SAT

JEDEC J-STD-035-1999

Inspect delamination，package crack，die crack 
void in resin，poor die attachment，etc.

JUNO TEST

Semiconductor parametric measurement of diode, transistor, MOS or Three-terminal regulator test.

*IV CURVE TRACER

GB/T 13973-2012

Semiconductor parametric measurement of MOS, BJT or ICs. Compared with good unit find differences.

TDR

TDR is used to measure reflections and time delays of pulses injected into a transmission line. Failure point positioning, Impedance measurement, Open/short test.

DE-CAP

Remove the compound,

expose the die , to observe defect of die or wire bond 

PROBE TEST

Observe electrical parameter or characteristic curve of the die

Crater test

Removing top metal layer on pad area, then observed whether the underlay damage

ION MILLING SYSTEM

Mechanical polishing fine processing , tiny cracks and void (for other polishing method is difficult),multilayer structure interface, resistance to grinding which it is easy damage.

Scanning Electron Microscopy

Plan view and cross sectional microstructure inspection for all kinds of samples  

Multilayer sample inspection and precise critical dimension measurement

EDX

Conduct qualitative and semi-quantitative analysis for specified microstructure , analysis elements on the sample surface.

RIE

Layer by layer checking/ inspection, such as etching residue, metal crack or broken, oxide defect and poor via connection。